| IPD65R650CEATMA1 | |
|---|---|
| Osa number | IPD65R650CEATMA1 |
| Tootja | Infineon Technologies |
| Kirjeldus | MOSFET N-CH 650V 10.1A TO252-3 |
| Saadaval kogus | 2610 pcs new original in stock. Taotluse laos ja pakkumises |
| ECAD -mudel | |
| Andmelehed | 1.IPD65R650CEATMA1.pdf2.IPD65R650CEATMA1.pdf |
| IPD65R650CEATMA1 Price |
Taotluse hind ja juhendi aeg online or Email us: Info@ariat-tech.com |
| IPD65R650CEATMA1 tehniline teave | |||
|---|---|---|---|
| Tootja Partii number | IPD65R650CEATMA1 | Kategooria | |
| Tootja | Cypress Semiconductor (Infineon Technologies) | Kirjeldus | MOSFET N-CH 650V 10.1A TO252-3 |
| Pakett / kott | PG-TO252-3 | Saadaval kogus | 2610 pcs |
| Vgs (th) (Max) @ Id | 3.5V @ 210µA | Vgs (max) | ±20V |
| Tehnoloogia | MOSFET (Metal Oxide) | Pakkuja seadme pakett | PG-TO252-3 |
| Seeria | CoolMOS™ | Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Voolukatkestus (max) | 86W (Tc) | Pakett / kott | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Pakk | Tape & Reel (TR) | Töötemperatuur | -40°C ~ 150°C (TJ) |
| Paigaldus tüüp | Surface Mount | Sisendvõimsus (Ciss) (max) @ Vds | 440 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | FET tüüp | N-Channel |
| FET funktsioon | - | Ajami pinge (max rds on, min rds on) | 10V |
| Vooluallikas (Vdss) | 650 V | Jooksev - pidev äravool (Id) @ 25 ° C | 10.1A (Tc) |
| Baastoote number | IPD65R | ||
| Lae alla | IPD65R650CEATMA1 PDF - EN.pdf | ||
Kirjuta meile: Info@Ariat-Tech.com või RFQ IPD65R650CEATMA1 Online.
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| IPD65R650CEATMA1 andmeleht | Laadige alla IPD65R650CEATMA1 andmeleht | Tootja Cypress Semiconductor (Infineon Technologies) |
