| IPB80N06S2L07ATMA3 | |
|---|---|
| Osa number | IPB80N06S2L07ATMA3 |
| Tootja | Infineon Technologies |
| Kirjeldus | MOSFET N-CH 55V 80A TO263-3 |
| Saadaval kogus | 2565 pcs new original in stock. Taotluse laos ja pakkumises |
| ECAD -mudel | |
| Andmelehed | 1.IPB80N06S2L07ATMA3.pdf2.IPB80N06S2L07ATMA3.pdf3.IPB80N06S2L07ATMA3.pdf |
| IPB80N06S2L07ATMA3 Price |
Taotluse hind ja juhendi aeg online or Email us: Info@ariat-tech.com |
| IPB80N06S2L07ATMA3 tehniline teave | |||
|---|---|---|---|
| Tootja Partii number | IPB80N06S2L07ATMA3 | Kategooria | |
| Tootja | Cypress Semiconductor (Infineon Technologies) | Kirjeldus | MOSFET N-CH 55V 80A TO263-3 |
| Pakett / kott | PG-TO263-3-2 | Saadaval kogus | 2565 pcs |
| Vgs (th) (Max) @ Id | 2V @ 150µA | Vgs (max) | ±20V |
| Tehnoloogia | MOSFET (Metal Oxide) | Pakkuja seadme pakett | PG-TO263-3-2 |
| Seeria | OptiMOS™ | Rds On (Max) @ Id, Vgs | 6.7mOhm @ 60A, 10V |
| Voolukatkestus (max) | 210W (Tc) | Pakett / kott | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Pakk | Tape & Reel (TR) | Töötemperatuur | -55°C ~ 175°C (TJ) |
| Paigaldus tüüp | Surface Mount | Sisendvõimsus (Ciss) (max) @ Vds | 3160 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | FET tüüp | N-Channel |
| FET funktsioon | - | Ajami pinge (max rds on, min rds on) | 4.5V, 10V |
| Vooluallikas (Vdss) | 55 V | Jooksev - pidev äravool (Id) @ 25 ° C | 80A (Tc) |
| Baastoote number | IPB80N | ||
| Lae alla | IPB80N06S2L07ATMA3 PDF - EN.pdf | ||
Kirjuta meile: Info@Ariat-Tech.com või RFQ IPB80N06S2L07ATMA3 Online.
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| IPB80N06S2L07ATMA3 pilt | IPB80N06S2L07ATMA3 pilt | IPB80N06S2L07ATMA3 PDF |
| IPB80N06S2L07ATMA3 andmeleht | Laadige alla IPB80N06S2L07ATMA3 andmeleht | Tootja Cypress Semiconductor (Infineon Technologies) |
